EPC Space Launches 15V-40V Rad-Hard eGaN FETs for AI Space Computing
Updated
Updated · EIN Presswire · Aug 19
EPC Space Launches 15V-40V Rad-Hard eGaN FETs for AI Space Computing
3 articles · Updated · EIN Presswire · Aug 19
Summary
Three new EPC Space eGaN FETs span 15V, 25V and 40V, targeting next-generation space computing power systems with 101A continuous current capability.
The devices pair low on-resistance—0.28 mΩ to 0.5 mΩ—with fast switching and zero reverse-recovery charge, aiming to shrink and improve 5V-12V bus converters and 0.8V point-of-load regulators.
Radiation tolerance is a key selling point: EPC Space said the parts exceed 1 Mrad TID, withstand SEE at LET(Si) 85 MeV cm2/mg, and handle neutron exposure above 4E15 n/cm2.
EPC Space said the FETs are built for VRM, IVR, POL and IBC applications powering processors such as Versal SoCs and NVIDIA GPUs as AI and high-performance computing move into orbit.
Engineering models are priced at $85 in 500-unit quantities, while space-qualified rad-hard versions cost $125.