ORNL Scientists Alter Altermagnetism With 2 Crystals, Opening Spintronics Path
Updated
Updated · Interesting Engineering · Oct 28
ORNL Scientists Alter Altermagnetism With 2 Crystals, Opening Spintronics Path
1 articles · Updated · Interesting Engineering · Oct 28
Summary
ORNL experiments showed that squeezing two altermagnet crystals—manganese telluride and iron sulfide—between titanium plates changed their magnetic domains and electron flow.
Neutron diffraction at the Spallation Neutron Source revealed that even a small mechanical squeeze shifted domain populations, while tests also detected changes in the anomalous Hall effect tied to magnetism.
The results suggest pressure could offer a simple way to control magnetism in altermagnets, a class that combines zero net magnetization with ferromagnet-like spin polarization and band splitting.
Two studies published in Physical Review X and Advanced Materials point to potential spintronics uses, where tuning spin rather than charge could support faster, more energy-efficient memory and computing devices.